HGTP5N120BND

Part NumberHGTP5N120BND

ManufacturerON Semiconductor

DescriptionIGBT 1200V 21A 167W TO220AB

DatasheetHGTG5N120BND, HGTP5N120BND

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT NPT 1200V 21A 167W Through Hole TO-220-3

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HGTP5N120BND - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

HGTG5N120BND, HGTP5N120BND

Standard Package

800

Manufacturer

ON Semiconductor

Series

Packaging

Tube

Part Status

Not For New Designs

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

21A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 5A

Power - Max

167W

Switching Energy

450µJ (on), 390µJ (off)

Input Type

Standard

Gate Charge

53nC

Td (on/off) @ 25°C

22ns/160ns

Test Condition

960V, 5A, 25Ohm, 15V

Reverse Recovery Time (trr)

65ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package