HN1B04FU-Y,LF

Part NumberHN1B04FU-Y,LF

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Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	HN1B04FU
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 6V
Power - Max	200mW
Frequency - Transition	150MHz
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6

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UMY1NTR	Rohm Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 150mA 180MHz, 140MHz 150mW Surface Mount UMT5,	View
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PBSS4032SPN,115	Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 30V 5.7A, 4.8A 140MHz, 115MHz 2.3W Surface Mount 8-SO,	View
SSVBC846BPDW1T1G	ON Semiconductor, Bipolar (BJT) Transistor Array Surface Mount SC-88/SC70-6/SOT-363,	View

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