HN1C01FE-GR,LF

Part NumberHN1C01FE-GR,LF

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2NPN 50V 0.15A ES6

DatasheetHN1C01FE

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6

To learn about the specification of HN1C01FE-GR,LF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add HN1C01FE-GR,LF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of HN1C01FE-GR,LF.
We are offering HN1C01FE-GR,LF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

HN1C01FE-GR,LF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays

Datasheet

HN1C01FE

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

Transistor Type

2 NPN (Dual)

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

250mV @ 10mA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 6V

Power - Max

100mW

Frequency - Transition

80MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

ES6

All categories