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HN1C01FYTE85LF


HN1C01FYTE85LF

Part NumberHN1C01FYTE85LF

Manufacturer

Description

Datasheet

Package / CaseSC-74, SOT-457

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Detailed Description

HN1C01FYTE85LF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Power - Max300mW
Frequency - Transition80MHz
Operating Temperature125°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSM6

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