HN4B01JE(TE85L,F)

Part NumberHN4B01JE(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS NPN/PNP 50V 0.15A ESV PLN

DatasheetHN4B01JE

Package / CaseSOT-553

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 150mA 80MHz 100mW Surface Mount ESV

To learn about the specification of HN4B01JE(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add HN4B01JE(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of HN4B01JE(TE85L,F).
We are offering HN4B01JE(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

HN4B01JE(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	HN4B01JE
Standard Package	4000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 10MA, 100MA
Power - Max	100mW
Frequency - Transition	80MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV

HN4B01JE(TE85L,F) - Related Products

More >>

MMDT2227M-7	Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 40V, 60V 600mA 300MHz, 200MHz 300mW Surface Mount SOT-26,	View
ZXTC2061E6TA	Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 12V 5A, 3.5A 260MHz 1.1W Surface Mount SOT-26,	View
SBC847BPDXV6T1G	ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 357mW Surface Mount SOT-563, Automotive, AEC-Q101	View
NST3946DP6T5G	ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA 200MHz, 250MHz 350mW Surface Mount SOT-963,	View
PBSS4032SPN,115	Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 30V 5.7A, 4.8A 140MHz, 115MHz 2.3W Surface Mount 8-SO,	View
SBC847BPDW1T3G	ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363, Automotive, AEC-Q101	View
PBSS4260PANPSX	Nexperia USA Inc., Bipolar (BJT) Transistor Array NPN, PNP 60V 2A 140MHz 370mW Surface Mount DFN2020D-6, Automotive, AEC-Q101	View
ZHB6792TA	Diodes Incorporated, Bipolar (BJT) Transistor Array 2 NPN, 2 PNP (H-Bridge) 70V 1A 100MHz 1.25W Surface Mount SOT-223,	View
BC846PNH6327XTSA1	Infineon Technologies, Bipolar (BJT) Transistor Array NPN, PNP 65V 100mA 250MHz 250mW Surface Mount PG-SOT363-6,	View
MCH6545-TL-E	ON Semiconductor, Bipolar (BJT) Transistor Array NPN, PNP 50V 500mA 500MHz 550mW Surface Mount 6-MCPH,	View
ZXTC6718MCTA	Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 20V 4.5A, 3.5A 140MHz, 180MHz 1.7W Surface Mount 8-DFN (3x2),	View
PBSS4140DPNF	Nexperia USA Inc., Bipolar (BJT) Transistor Array Surface Mount SOT-457,	View

HN4B01JE(TE85L,F) - Tags

HN4B01JE(TE85L,F) HN4B01JE(TE85L,F) PDF HN4B01JE(TE85L,F) datasheet HN4B01JE(TE85L,F) specification HN4B01JE(TE85L,F) image HN4B01JE(TE85L,F) India Renesas Electronics India HN4B01JE(TE85L,F) buy HN4B01JE(TE85L,F) HN4B01JE(TE85L,F) price HN4B01JE(TE85L,F) distributor HN4B01JE(TE85L,F) supplier HN4B01JE(TE85L,F) wholesales