HN4C51J(TE85L,F)

Part NumberHN4C51J(TE85L,F)

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Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	HN4C51J
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN (Dual) Common Base
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	120V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Power - Max	300mW
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-74A, SOT-753
Supplier Device Package	SMV

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BC847BV,315	Nexperia USA Inc., Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 300mW Surface Mount SOT-666,	View
MMPQ2222A	ON Semiconductor, Bipolar (BJT) Transistor Array 4 NPN (Quad) 40V 500mA 300MHz 1W Surface Mount 16-SOIC,	View