HUF76609D3

Part NumberHUF76609D3

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 10A TO-251AA

DatasheetHUF76609D3, HUF76609D3S

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 10A (Tc) 49W (Tc) Through Hole I-PAK

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HUF76609D3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

HUF76609D3, HUF76609D3S

Standard Package

Manufacturer

ON Semiconductor

Series

UltraFET™

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

160mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

425pF @ 25V

FET Feature

Power Dissipation (Max)

49W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

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