IAUT165N08S5N029ATMA2


IAUT165N08S5N029ATMA2

Part NumberIAUT165N08S5N029ATMA2

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Description

Datasheet

Package / Case8-PowerSFN

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Detailed Description

IAUT165N08S5N029ATMA2 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6370pF @ 40V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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