IAUT165N08S5N029ATMA2
IAUT165N08S5N029ATMA2
Part Number IAUT165N08S5N029ATMA2 Description 80V 165A 2.9MOHM TOLL Package / Case 8-PowerSFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOF-8-1
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IAUT165N08S5N029ATMA2 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IAUT165N08S5N029 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 165A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id 3.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6370pF @ 40V FET Feature - Power Dissipation (Max) 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HSOF-8-1 Package / Case 8-PowerSFN
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