IAUT260N10S5N019ATMA1
IAUT260N10S5N019ATMA1
Part Number IAUT260N10S5N019ATMA1
Description MOSFET_(75V,120V(
Package / Case 8-PowerSFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 260A (Tc) 300W (Tc) Surface Mount PG-HSOF-8-1
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IAUT260N10S5N019ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IAUT260N10S5N019
Standard Package 2000
Manufacturer Infineon Technologies
Series OptiMOS™-5
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 166nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11830pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
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