IDM05G120C5XTMA1

Part NumberIDM05G120C5XTMA1

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Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet	IDM05G120C5
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolSiC™
Packaging	Cut Tape (CT)
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io)	5A (DC)
Voltage - Forward (Vf) (Max) @ If	1.8V @ 5A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	33µA @ 1200V
Capacitance @ Vr, F	301pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PG-TO252-2
Operating Temperature - Junction	-55°C ~ 175°C

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IDH12G65C6XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 650V 27A (DC) Through Hole PG-TO220-2,	View
IDM02G120C5XTMA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 2A (DC) Surface Mount PG-TO252-2, CoolSiC™	View
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IDW40G65C5XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 650V 40A (DC) Through Hole PG-TO247-3, CoolSiC™	View
IDH10G65C6XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 650V 24A (DC) Through Hole PG-TO220-2,	View
IDM10G120C5XTMA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 38A (DC) Surface Mount PG-TO252-2, CoolSiC™	View
IDH08G65C6XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 650V 20A (DC) Through Hole PG-TO220-2,	View
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IDW30G65C5XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 650V 30A (DC) Through Hole PG-TO247-3, CoolSiC™	View