IGLD60R070D1AUMA1


IGLD60R070D1AUMA1

Part NumberIGLD60R070D1AUMA1

Manufacturer

Description

Datasheet

Package / Case8-LDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IGLD60R070D1AUMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesCoolGaN™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.6V @ 2.6mA
Vgs (Max)-10V
Input Capacitance (Ciss) (Max) @ Vds380pF @ 400V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-LSON-8-1
Package / Case8-LDFN Exposed Pad

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IGLD60R070D1AUMA1 - Tags

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