IMH23T110


IMH23T110

Part NumberIMH23T110

Manufacturer

Description

Datasheet

Package / CaseSC-74, SOT-457

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IMH23T110 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)20V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)-
Frequency - Transition150MHz
Power - Max300mW
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSMT6
Base Part Number*MH23

IMH23T110 - Related Products

More >>
EMH59T2R Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 70mA 250MHz 150mW Surface Mount EMT6, View
DMC964040R Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini6-F3-B, View
DMC261040R Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini5-G3-B, View
FMG11AT148 Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT5, View
PRMH2Z Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 480mW Surface Mount DFN1412-6, Automotive, AEC-Q101 View
NSBC144EDXV6T1G ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563, View
RN1701JE(TE85L,F) Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV, View
RN1970(TE85L,F) Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6, View
RN1903,LF(CT Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6, View
UMG4NTR Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5, View
UMG8NTR Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5, View
RN1606(TE85L,F) Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6, View

IMH23T110 - Tags

IMH23T110 IMH23T110 PDF IMH23T110 datasheet IMH23T110 specification IMH23T110 image IMH23T110 India Renesas Electronics India IMH23T110 buy IMH23T110 IMH23T110 price IMH23T110 distributor IMH23T110 supplier IMH23T110 wholesales