Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPA086N10N3GXKSA1

IPA086N10N3GXKSA1

IPA086N10N3GXKSA1

Part NumberIPA086N10N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 45A TO220-FP

DatasheetIPA086N10N3 G

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 45A (Tc) 37.5W (Tc) Through Hole PG-TO220-FP

To learn about the specification of IPA086N10N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPA086N10N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPA086N10N3GXKSA1.
We are offering IPA086N10N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPA086N10N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPA086N10N3 G
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	37.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack

IPA086N10N3GXKSA1 - Related Products

	SI7716ADN-T1-GE3	Vishay Siliconix, N-Channel 30V 16A (Tc) 3.5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IXTA08N50D2	IXYS, N-Channel 500V 800mA (Tc) 60W (Tc) Surface Mount TO-263 (IXTA),	View
	TPN1R603PL,L1Q	Toshiba Semiconductor and Storage, N-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSIX-H	View
	FQU4N50TU-WS	ON Semiconductor, N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK, QFET®	View
	STW26NM50	STMicroelectronics, N-Channel 500V 30A (Tc) 313W (Tc) Through Hole TO-247-3, MDmesh™	View
	MTM862270LBF	Panasonic Electronic Components, N-Channel 20V 2.2A (Ta) 540mW (Ta) Surface Mount WSSMini6-F1,	View
	STD3LN80K5	STMicroelectronics, N-Channel 800V 2A (Tc) 45W (Tc) Surface Mount DPAK, MDmesh™	View
	STF16N65M2	STMicroelectronics, N-Channel 650V 11A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2	View
	NTTFS4C02NTAG	ON Semiconductor, N-Channel 30V 170A (Tc) 91W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	SI2102-TP	Micro Commercial Co, N-Channel 20V 2.1A 200mW Surface Mount SOT-323,	View
	IXFT70N20Q3	IXYS, N-Channel 200V 70A (Tc) 690W (Tc) Surface Mount TO-268, HiPerFET™	View
	IRF7759L2TRPBF	Infineon Technologies, N-Channel 75V 26A (Ta), 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DIRECTFET L8, HEXFET®	View

IPA086N10N3GXKSA1 - Tags

IPA086N10N3GXKSA1 IPA086N10N3GXKSA1 PDF IPA086N10N3GXKSA1 datasheet IPA086N10N3GXKSA1 specification IPA086N10N3GXKSA1 image IPA086N10N3GXKSA1 India Renesas Electronics India IPA086N10N3GXKSA1 buy IPA086N10N3GXKSA1 IPA086N10N3GXKSA1 price IPA086N10N3GXKSA1 distributor IPA086N10N3GXKSA1 supplier IPA086N10N3GXKSA1 wholesales