Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPA086N10N3GXKSA1

IPA086N10N3GXKSA1

IPA086N10N3GXKSA1

Part NumberIPA086N10N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 45A TO220-FP

DatasheetIPA086N10N3 G

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 45A (Tc) 37.5W (Tc) Through Hole PG-TO220-FP

To learn about the specification of IPA086N10N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPA086N10N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPA086N10N3GXKSA1.
We are offering IPA086N10N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPA086N10N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPA086N10N3 G
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	37.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack

IPA086N10N3GXKSA1 - Related Products

	TSM60NB1R4CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 3A (Tc) 28.4W (Tc) Surface Mount TO-252, (D-Pak),	View
	IRFBF30STRLPBF	Vishay Siliconix, N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak),	View
	CSD17578Q5AT	Texas Instruments, N-Channel 30V 25A (Ta) 3.1W (Ta), 42W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	CSD17484F4	Texas Instruments, N-Channel 30V 3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	STB270N4F3	STMicroelectronics, N-Channel 40V 160A (Tc) 330W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, STripFET™ III	View
	IRF644STRRPBF	Vishay Siliconix, N-Channel 250V 14A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	SI2318DS-T1-GE3	Vishay Siliconix, N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	PSMN057-200B,118	Nexperia USA Inc., N-Channel 200V 39A (Tc) 250W (Tc) Surface Mount D2PAK, TrenchMOS™	View
	AOT5N50	Alpha & Omega Semiconductor Inc., N-Channel 500V 5A (Tc) 104W (Tc) Through Hole TO-220,	View
	BUK764R4-60E,118	Nexperia USA Inc., N-Channel 60V 100A (Tc) 234W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	TK9A90E,S4X	Toshiba Semiconductor and Storage, N-Channel 900V 9A (Ta) 50W (Tc) Through Hole TO-220SIS, π-MOSVIII	View
	DMN2050L-7	Diodes Incorporated, N-Channel 20V 5.9A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View

IPA086N10N3GXKSA1 - Tags

IPA086N10N3GXKSA1 IPA086N10N3GXKSA1 PDF IPA086N10N3GXKSA1 datasheet IPA086N10N3GXKSA1 specification IPA086N10N3GXKSA1 image IPA086N10N3GXKSA1 India Renesas Electronics India IPA086N10N3GXKSA1 buy IPA086N10N3GXKSA1 IPA086N10N3GXKSA1 price IPA086N10N3GXKSA1 distributor IPA086N10N3GXKSA1 supplier IPA086N10N3GXKSA1 wholesales