Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPA093N06N3GXKSA1

IPA093N06N3GXKSA1

IPA093N06N3GXKSA1

Part NumberIPA093N06N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 43A TO220-3-31

DatasheetIPA093N06N3 G

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 43A (Tc) 33W (Tc) Through Hole PG-TO220-3-31 Full Pack

To learn about the specification of IPA093N06N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPA093N06N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPA093N06N3GXKSA1.
We are offering IPA093N06N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPA093N06N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPA093N06N3 G
Standard Package	50
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3900pF @ 30V
FET Feature	-
Power Dissipation (Max)	33W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-31 Full Pack
Package / Case	TO-220-3 Full Pack

IPA093N06N3GXKSA1 - Related Products

	IRFB7537PBF	Infineon Technologies, N-Channel 60V 173A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	PSMN1R5-30BLEJ	Nexperia USA Inc., N-Channel 30V 120A (Tc) 401W (Tc) Surface Mount D2PAK,	View
	SUM45N25-58-E3	Vishay Siliconix, N-Channel 250V 45A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	PMN120ENEX	Nexperia USA Inc., N-Channel 60V 3.1A (Ta) 1.4W (Ta), 6.25W (Tc) Surface Mount 6-TSOP,	View
	IRFR4510TRPBF	Infineon Technologies, N-Channel 100V 56A (Tc) 143W (Tc) Surface Mount D-Pak, HEXFET®	View
	IPB60R080P7ATMA1	Infineon Technologies, N-Channel 650V 37A (Tc) 129W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7	View
	SIR622DP-T1-GE3	Vishay Siliconix, N-Channel 150V 51.6A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	DMN67D7L-7	Diodes Incorporated, N-Channel 60V 210mA (Ta) 570mW (Ta) Surface Mount SOT-23-3,	View
	STU9N60M2	STMicroelectronics, N-Channel 600V 5.5A (Tc) 60W (Tc) Through Hole IPAK (TO-251), MDmesh™ II Plus	View
	IRF520NSTRLPBF	Infineon Technologies, N-Channel 100V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK, HEXFET®	View
	SI7108DN-T1-GE3	Vishay Siliconix, N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	STD6N95K5	STMicroelectronics, N-Channel 950V 9A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH5™	View

IPA093N06N3GXKSA1 - Tags

IPA093N06N3GXKSA1 IPA093N06N3GXKSA1 PDF IPA093N06N3GXKSA1 datasheet IPA093N06N3GXKSA1 specification IPA093N06N3GXKSA1 image IPA093N06N3GXKSA1 India Renesas Electronics India IPA093N06N3GXKSA1 buy IPA093N06N3GXKSA1 IPA093N06N3GXKSA1 price IPA093N06N3GXKSA1 distributor IPA093N06N3GXKSA1 supplier IPA093N06N3GXKSA1 wholesales