IPA80R650CEXKSA2
IPA80R650CEXKSA2
Part Number IPA80R650CEXKSA2 Description MOSFET N-CH 800V TO-220-3 Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 8A (Ta) 33W (Tc) Through Hole TO-220-3F
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IPA80R650CEXKSA2 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPA80R650CE Standard Package 500 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 650mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id 3.9V @ 470µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V FET Feature - Power Dissipation (Max) 33W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3F Package / Case TO-220-3 Full Pack
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