IPAW60R180P7SXKSA1
IPAW60R180P7SXKSA1
Part Number IPAW60R180P7SXKSA1
Description MOSFET N-CHANNEL 650V 18A TO220
Package / Case TO-220-3 Full Pack
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 18A (Tc) 26W (Tc) Through Hole PG-TO220 Full Pack
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IPAW60R180P7SXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPAW60R180P7S
Standard Package 450
Manufacturer Infineon Technologies
Series CoolMOS™ P7
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1081pF @ 400V
FET Feature -
Power Dissipation (Max) 26W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack
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