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IPAW60R180P7SXKSA1

IPAW60R180P7SXKSA1

Part NumberIPAW60R180P7SXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CHANNEL 650V 18A TO220

DatasheetIPAW60R180P7S

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 18A (Tc) 26W (Tc) Through Hole PG-TO220 Full Pack

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IPAW60R180P7SXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPAW60R180P7S
Standard Package	450
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id	4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1081pF @ 400V
FET Feature	-
Power Dissipation (Max)	26W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220 Full Pack
Package / Case	TO-220-3 Full Pack

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IPAW60R180P7SXKSA1 - Tags

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