IPAW60R600CEXKSA1
IPAW60R600CEXKSA1
Part Number IPAW60R600CEXKSA1 Description MOSFET N-CH 600V TO220-3 Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 10.3A (Tc) 28W (Tc) Through Hole PG-TO220 Full Pack
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IPAW60R600CEXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPAW60R600CE Standard Package 450 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 444pF @ 100V FET Feature Super Junction Power Dissipation (Max) 28W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack
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