IPB017N10N5LFATMA1
IPB017N10N5LFATMA1
Part Number IPB017N10N5LFATMA1 Description MOSFET N-CH 100V D2PAK-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 180A (Tc) 313W (Tc) Surface Mount PG-TO263-7
To learn about the specification of IPB017N10N5LFATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB017N10N5LFATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB017N10N5LFATMA1.
We are offering IPB017N10N5LFATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB017N10N5LFATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB017N10N5LF Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™-5 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4.1V @ 270µA Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 50V FET Feature - Power Dissipation (Max) 313W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab)
IPB017N10N5LFATMA1 - Related ProductsMore >>
SI2356DS-T1-GE3 Vishay Siliconix, N-Channel 40V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount TO-236, TrenchFET®
View
TSM3N80CZ C0G Taiwan Semiconductor Corporation, N-Channel 800V 3A (Tc) 94W (Tc) Through Hole TO-220,
View
STU9N65M2 STMicroelectronics, N-Channel 650V 5A (Tc) 60W (Tc) Through Hole IPAK (TO-251), MDmesh™
View
IRLR8729TRPBF Infineon Technologies, N-Channel 30V 58A (Tc) 55W (Tc) Surface Mount D-Pak, HEXFET®
View
DMN2044UCB4-7 Diodes Incorporated, N-Channel 20V 3.3A (Ta) 720mW Surface Mount U-WLB1010-4,
View
FDD7N60NZTM ON Semiconductor, N-Channel 600V 5.5A (Tc) 90W (Tc) Surface Mount D-Pak, UniFET-II™
View
IPB65R110CFDATMA1 Infineon Technologies, N-Channel 650V 31.2A (Tc) 277.8W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™
View
IPN80R600P7ATMA1 Infineon Technologies, N-Channel 800V 8A (Tc) 7.4W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
DMN15H310SE-13 Diodes Incorporated, N-Channel 150V 2A (Ta), 7.1A (Tc) 1.9W (Ta) Surface Mount SOT-223,
View
IRFU320PBF Vishay Siliconix, N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,
View
IRFP044NPBF Infineon Technologies, N-Channel 55V 53A (Tc) 120W (Tc) Through Hole TO-247AC, HEXFET®
View
IRFL4105TRPBF Infineon Technologies, N-Channel 55V 3.7A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
IPB017N10N5LFATMA1 - Tags
English
