IPB019N08N3GATMA1
IPB019N08N3GATMA1
Part Number IPB019N08N3GATMA1 Description MOSFET N-CH 80V 180A TO263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
To learn about the specification of IPB019N08N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB019N08N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB019N08N3GATMA1.
We are offering IPB019N08N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB019N08N3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB019N08N3 G Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 40V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab)
IPB019N08N3GATMA1 - Related ProductsMore >>
CSD18511Q5AT Texas Instruments, N-Channel 40V 159A (Tc) 104W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
View
PSMN3R8-100BS,118 Nexperia USA Inc., N-Channel 100V 120A (Tc) 306W (Tc) Surface Mount D2PAK,
View
FDD7N60NZTM ON Semiconductor, N-Channel 600V 5.5A (Tc) 90W (Tc) Surface Mount D-Pak, UniFET-II™
View
IRF3808PBF Infineon Technologies, N-Channel 75V 140A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®
View
TK8Q65W,S1Q Toshiba Semiconductor and Storage, N-Channel 650V 7.8A (Ta) 80W (Tc) Through Hole I-PAK, DTMOSIV
View
SI4442DY-T1-E3 Vishay Siliconix, N-Channel 30V 15A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®
View
VN2210N2 Microchip Technology, N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39,
View
IRL530NSTRLPBF Infineon Technologies, N-Channel 100V 17A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK, HEXFET®
View
IPB60R060C7ATMA1 Infineon Technologies, N-Channel 650V 35A (Tc) 162W (Tc) Surface Mount PG-TO263-3, CoolMOS™ C7
View
IPD135N08N3GATMA1 Infineon Technologies, N-Channel 80V 45A (Tc) 79W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
NTD18N06LT4G ON Semiconductor, N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Surface Mount DPAK,
View
FQD2N100TM ON Semiconductor, N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®
View
IPB019N08N3GATMA1 - Tags
English
