IPB049NE7N3GATMA1
IPB049NE7N3GATMA1
Part Number IPB049NE7N3GATMA1 Description MOSFET N-CH 75V 80A TO263-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 75V 80A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263AB)
To learn about the specification of IPB049NE7N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB049NE7N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB049NE7N3GATMA1.
We are offering IPB049NE7N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB049NE7N3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB049NE7N3 G Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id 3.8V @ 91µA Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 37.5V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB049NE7N3GATMA1 - Related ProductsMore >>
TSM170N06CP ROG Taiwan Semiconductor Corporation, N-Channel 60V 38A (Tc) 46W (Tc) Surface Mount TO-252, (D-Pak),
View
IPD80R750P7ATMA1 Infineon Technologies, N-Channel 800V 7A (Tc) 51W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
View
DMN1045UFR4-7 Diodes Incorporated, N-Channel 12V 3.2A (Ta) 500mW (Ta) Surface Mount X2-DFN1010-3,
View
TSM600N25ECH C5G Taiwan Semiconductor Corporation, N-Channel 250V 8A (Tc) 52W (Tc) Through Hole TO-251 (IPAK),
View
FDD6530A ON Semiconductor, N-Channel 20V 21A (Ta) 3.3W (Ta), 33W (Tc) Surface Mount TO-252, PowerTrench®
View
SIHP12N60E-E3 Vishay Siliconix, N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB,
View
IRFR8314TRPBF Infineon Technologies, N-Channel 30V 90A (Tc) 125W (Tc) Surface Mount D-PAK (TO-252AA), HEXFET®
View
SI7322ADN-T1-GE3 Vishay Siliconix, N-Channel 100V 15.1A (Tc) 26W (Tc) Surface Mount PowerPAK® 1212-8, ThunderFET®
View
TSM650N15CR RLG Taiwan Semiconductor Corporation, N-Channel 150V 24A (Tc) 96W (Tc) Surface Mount 8-PDFN (5x6),
View
BSP149H6906XTSA1 Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
DMN2046U-7 Diodes Incorporated, N-Channel 20V 3.4A (Ta) 760mW (Ta) Surface Mount SOT-23,
View
HUF75339P3 ON Semiconductor, N-Channel 55V 75A (Tc) 200W (Tc) Through Hole TO-220-3, UltraFET™
View
IPB049NE7N3GATMA1 - Tags
English
