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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB107N20N3 G,IPx110N20N3 G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 88A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10.7mOhm @ 88A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STF45N10F7 STMicroelectronics, N-Channel 100V 30A (Tc) 25W (Tc) Through Hole TO-220FP, DeepGATE™, STripFET™ VII
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NX7002BKMBYL Nexperia USA Inc., N-Channel 60V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Surface Mount DFN1006B-3, TrenchMOS™
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STB34NM60N STMicroelectronics, N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D2PAK, MDmesh™ II
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IXFA22N65X2 IXYS, N-Channel 650V 22A (Tc) 390W (Tc) Surface Mount TO-263, HiPerFET™
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FDT86244 ON Semiconductor, N-Channel 150V 2.8A (Tc) 2.2W (Ta) Surface Mount SOT-223-4, PowerTrench®
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NVMFS5844NLT1G ON Semiconductor, N-Channel 60V 11.2A (Ta) 3.7W (Ta), 107W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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TSM160N10CZ C0G Taiwan Semiconductor Corporation, N-Channel 100V 160A (Tc) 300W (Tc) Through Hole TO-220,
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2N7002Q-7-F Diodes Incorporated, N-Channel 60V 170mA (Ta) 370mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101
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FDD8876 ON Semiconductor, N-Channel 30V 15A (Ta), 73A (Tc) 70W (Tc) Surface Mount TO-252AA, PowerTrench®
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IXFQ72N20X3 IXYS, N-Channel 200V 72A (Tc) 320W (Tc) Through Hole TO-3P, HiPerFET™
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IRFH8318TRPBF Infineon Technologies, N-Channel 30V 27A (Ta), 120A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount PQFN (5x6), HEXFET®
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STD16NF06LT4 STMicroelectronics, N-Channel 60V 24A (Tc) 40W (Tc) Surface Mount DPAK, STripFET™ II
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