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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB107N20N3 G,IPx110N20N3 G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10.7mOhm @ 88A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPA17N80C3XKSA1
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Rohm Semiconductor, N-Channel 600V 7A (Tc) 40W (Tc) Through Hole TO-220FM,
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TSM70N900CP ROG
Taiwan Semiconductor Corporation, N-Channel 700V 4.5A (Tc) 50W (Tc) Surface Mount TO-252, (D-Pak),
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BUK7Y14-80EX
Nexperia USA Inc., N-Channel 80V 65A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
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