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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB108N15N3 G,IPx111N15N3 G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 83A, 10V
Vgs(th) (Max) @ Id 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 75V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLP3034PBF
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TSM070NB04CR RLG
Taiwan Semiconductor Corporation, N-Channel 40V 15A (Ta), 75A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5x6),
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STD20NF06LAG
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SQJA20EP-T1_GE3
Vishay Siliconix, N-Channel 200V 22.5A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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STMicroelectronics, N-Channel 900V 5.8A (Tc) 30W (Tc) Through Hole TO-220FP, SuperMESH™
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SIJA58DP-T1-GE3
Vishay Siliconix, N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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Diodes Incorporated, N-Channel 30V 10A (Ta) 730mW (Ta) Surface Mount U-DFN2020-6 (Type E),
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SIR862DP-T1-GE3
Vishay Siliconix, N-Channel 25V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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FQPF10N50CF
ON Semiconductor, N-Channel 500V 10A (Tc) 48W (Tc) Through Hole TO-220F, FRFET®
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TSM850N06CX RFG
Taiwan Semiconductor Corporation, N-Channel 60V 3A (Tc) 1.7W (Tc) Surface Mount SOT-23,
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