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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB108N15N3 G,IPx111N15N3 G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 83A, 10V
Vgs(th) (Max) @ Id 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 75V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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NVMFS5C460NLAFT1G
ON Semiconductor, N-Channel 40V 21A (Ta), 78A (Tc) 3.6W (Ta), 50W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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IRLR2905TRLPBF
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SIR688DP-T1-GE3
Vishay Siliconix, N-Channel 60V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IRFH6200TRPBF
Infineon Technologies, N-Channel 20V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®
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ON Semiconductor, N-Channel 60V 30A (Tc) 3.2W (Ta), 50W (Tc) Surface Mount TO-252, PowerTrench®
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Microchip Technology, N-Channel 90V 350mA (Tj) 6.25W (Tc) Through Hole TO-39,
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Vishay Siliconix, N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak,
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SSM6K403TU,LF
Toshiba Semiconductor and Storage, N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UF6, U-MOSIII
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TK30A06N1,S4X
Toshiba Semiconductor and Storage, N-Channel 60V 30A (Tc) 25W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
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NVMFS5C450NLWFAFT1G
ON Semiconductor, N-Channel 40V 110A (Tc) 68W (Tc) Surface Mount, Wettable Flank 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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