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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB108N15N3 G,IPx111N15N3 G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 83A, 10V
Vgs(th) (Max) @ Id 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 75V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Diodes Incorporated, N-Channel 60V 90A (Tc) 2.1W (Ta), 100W (Tc) Surface Mount TO-252-4L, Automotive, AEC-Q101
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ON Semiconductor, N-Channel 600V 35A (Tc) 312.5W (Tc) Through Hole TO-3PN, SuperFET™
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Rohm Semiconductor, N-Channel 60V 22A (Ta) 20W (Tc) Surface Mount TO-252, Automotive, AEC-Q101
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Vishay Siliconix, N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-220AB,
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SIR106DP-T1-RE3
Vishay Siliconix, N-Channel 100V 16.1A (Ta), 65.8A (Tc) 3.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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IRF135B203
Infineon Technologies, N-Channel 135V 129A (Tc) 441W (Tc) Through Hole PG-TO220-3, StrongIRFET™
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