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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB108N15N3 G,IPx111N15N3 G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 83A, 10V
Vgs(th) (Max) @ Id 4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 75V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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BSP135H6327XTSA1
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STU13N60M2
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DMN3009SFGQ-7
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RSD201N10TL
Rohm Semiconductor, N-Channel 100V 20A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3,
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STF2N62K3
STMicroelectronics, N-Channel 620V 2.2A (Tc) 20W (Tc) Through Hole TO-220FP, SuperMESH3™
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