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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB123N10N3G, (IPP,IPI)126N10N3 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 12.3mOhm @ 46A, 10V Vgs(th) (Max) @ Id 3.5V @ 46µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V FET Feature - Power Dissipation (Max) 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AOT27S60L Alpha & Omega Semiconductor Inc., N-Channel 600V 27A (Tc) 357W (Tc) Through Hole TO-220, aMOS™
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2N7002BKW,115 Nexperia USA Inc., N-Channel 60V 310mA (Ta) 275mW (Ta) Surface Mount SC-70, Automotive, AEC-Q101, TrenchMOS™
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IRFP440PBF Vishay Siliconix, N-Channel 500V 8.8A (Tc) 150W (Tc) Through Hole TO-247-3,
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IPL60R285P7AUMA1 Infineon Technologies, N-Channel 650V 13A (Tc) 59W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7
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STP25N10F7 STMicroelectronics, N-Channel 100V 25A (Tc) 50W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII
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DMT10H010LCT Diodes Incorporated, N-Channel 100V 98A (Tc) 2W (Ta), 139W (Tc) Through Hole TO-220AB,
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BSP299H6327XUSA1 Infineon Technologies, N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
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CPH3461-TL-W ON Semiconductor, N-Channel 250V 350mA (Ta) 1W (Ta) Surface Mount 3-CPH,
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BUK9Y107-80EX Nexperia USA Inc., N-Channel 80V 11.8A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
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IXFQ30N60X IXYS, N-Channel 600V 30A (Tc) 500W (Tc) Through Hole TO-3P, HiPerFET™
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IRFM120ATF ON Semiconductor, N-Channel 100V 2.3A (Ta) 2.4W (Ta) Surface Mount SOT-223-4,
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IRF3808PBF Infineon Technologies, N-Channel 75V 140A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®
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