IPB60R380C6ATMA1
IPB60R380C6ATMA1
Part Number IPB60R380C6ATMA1 Description MOSFET N-CH 600V 10.6A TO263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount D²PAK (TO-263AB)
To learn about the specification of IPB60R380C6ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB60R380C6ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB60R380C6ATMA1.
We are offering IPB60R380C6ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB60R380C6ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx60R380C6 Standard Package 1000 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tape & Reel (TR) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R380C6ATMA1 - Related ProductsMore >>
SI5476DU-T1-GE3 Vishay Siliconix, N-Channel 60V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-PowerPak® ChipFet (3x1.9), TrenchFET®
View
IGO60R070D1AUMA1 Infineon Technologies, N-Channel 600V 31A (Tc) 125W (Tc) Surface Mount PG-DSO-20-85, CoolGaN™
View
SSM3K345R,LF Toshiba Semiconductor and Storage, N-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
STB18NM80 STMicroelectronics, N-Channel 800V 17A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™
View
TSM2302CX RFG Taiwan Semiconductor Corporation, N-Channel 20V 3.9A (Tc) 1.5W (Tc) Surface Mount SOT-23,
View
STP80NF10 STMicroelectronics, N-Channel 100V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II
View
FQPF5N50CYDTU ON Semiconductor, N-Channel 500V 5A (Tc) 38W (Tc) Through Hole TO-220F-3 (Y-Forming), QFET®
View
IRFZ14SPBF Vishay Siliconix, N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,
View
CPH6445-TL-W ON Semiconductor, N-Channel 60V 3.5A (Ta) 1.6W (Ta) Surface Mount 6-CPH,
View
STE88N65M5 STMicroelectronics, N-Channel 650V 88A (Tc) 494W (Tc) Chassis Mount ISOTOP, MDmesh™ V
View
BSS138NH6433XTMA1 Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS™
View
STU9HN65M2 STMicroelectronics, N-Channel 650V 5.5A (Tc) 60W (Tc) Through Hole I-PAK, MDmesh™ M2
View
IPB60R380C6ATMA1 - Tags
English
