IPC100N04S51R2ATMA1


IPC100N04S51R2ATMA1

Part NumberIPC100N04S51R2ATMA1

Manufacturer

Description

Datasheet

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPC100N04S51R2ATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs131nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7650pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-34
Package / Case8-PowerTDFN

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IPC100N04S51R2ATMA1 - Tags

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