IPC100N04S51R2ATMA1
IPC100N04S51R2ATMA1
Part Number IPC100N04S51R2ATMA1 Description MOSFET N-CH 40V 100A 8TDSON Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-34
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IPC100N04S51R2ATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPC100N04S5-1R2 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.4V @ 90µA Gate Charge (Qg) (Max) @ Vgs 131nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7650pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-34 Package / Case 8-PowerTDFN
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