IPC100N04S51R2ATMA1
IPC100N04S51R2ATMA1
Part Number IPC100N04S51R2ATMA1
Description MOSFET N-CH 40V 100A 8TDSON
Package / Case 8-PowerTDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-34
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IPC100N04S51R2ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPC100N04S5-1R2
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 131nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7650pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-34
Package / Case 8-PowerTDFN
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