Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD082N10N3GATMA1

IPD082N10N3GATMA1

IPD082N10N3GATMA1

Part NumberIPD082N10N3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 80A TO252-3

DatasheetIPx08xN10N3 G

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD082N10N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD082N10N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD082N10N3GATMA1.
We are offering IPD082N10N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD082N10N3GATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx08xN10N3 G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD082N10N3GATMA1 - Related Products

	SSM3K318R,LF	Toshiba Semiconductor and Storage, N-Channel 60V 2.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIV	View
	ZVN2110A	Diodes Incorporated, N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole TO-92-3,	View
	IPB60R040C7ATMA1	Infineon Technologies, N-Channel 650V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3, CoolMOS™ C7	View
	STW5NK100Z	STMicroelectronics, N-Channel 1000V 3.5A (Tc) 125W (Tc) Through Hole TO-247-3, SuperMESH3™	View
	DMN4026SK3-13	Diodes Incorporated, N-Channel 40V 28A (Tc) 1.6W (Ta) Surface Mount TO-252,	View
	IRFR1018ETRPBF	Infineon Technologies, N-Channel 60V 56A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	NTA7002NT1G	ON Semiconductor, N-Channel 30V 154mA (Tj) 300mW (Tj) Surface Mount SC-75, SOT-416,	View
	IGT60R070D1ATMA1	Infineon Technologies, N-Channel 600V 31A (Tc) 125W (Tc) Surface Mount PG-HSOF-8-3, CoolGaN™	View
	DMN3008SFG-7	Diodes Incorporated, N-Channel 30V 17.6A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8,	View
	BUK964R1-40E,118	Nexperia USA Inc., N-Channel 40V 75A (Tc) 182W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SIR872DP-T1-GE3	Vishay Siliconix, N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount, TrenchFET®	View
	STB30NF20L	STMicroelectronics, N-Channel 200V 30A (Tc) 150W (Tc) Surface Mount D2PAK, STripFET™	View

IPD082N10N3GATMA1 - Tags

IPD082N10N3GATMA1 IPD082N10N3GATMA1 PDF IPD082N10N3GATMA1 datasheet IPD082N10N3GATMA1 specification IPD082N10N3GATMA1 image IPD082N10N3GATMA1 India Renesas Electronics India IPD082N10N3GATMA1 buy IPD082N10N3GATMA1 IPD082N10N3GATMA1 price IPD082N10N3GATMA1 distributor IPD082N10N3GATMA1 supplier IPD082N10N3GATMA1 wholesales