Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD082N10N3GATMA1

IPD082N10N3GATMA1

IPD082N10N3GATMA1

Part NumberIPD082N10N3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 80A TO252-3

DatasheetIPx08xN10N3 G

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD082N10N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD082N10N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD082N10N3GATMA1.
We are offering IPD082N10N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD082N10N3GATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx08xN10N3 G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD082N10N3GATMA1 - Related Products

	TSM80N950CI C0G	Taiwan Semiconductor Corporation, N-Channel 800V 6A (Tc) 25W (Tc) Through Hole ITO-220AB,	View
	DMG1012TQ-7	Diodes Incorporated, N-Channel 20V 630mA (Ta) 280mW (Ta) Surface Mount SOT-523, Automotive, AEC-Q101	View
	R5016FNX	Rohm Semiconductor, N-Channel 500V 16A (Ta) 50W (Tc) Through Hole TO-220FM,	View
	DMN62D0U-7	Diodes Incorporated, N-Channel 60V 380mA (Ta) 380mW (Ta) Surface Mount SOT-23,	View
	SI8812DB-T2-E1	Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	FQD1N80TM	ON Semiconductor, N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak, QFET®	View
	IPW60R070P6XKSA1	Infineon Technologies, N-Channel 600V 53.5A (Tc) 391W (Tc) Through Hole PG-TO247-3, CoolMOS™ P6	View
	SI7850DP-T1-GE3	Vishay Siliconix, N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	TPH2R306NH,L1Q	Toshiba Semiconductor and Storage, N-Channel 60V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	IRFS4321TRLPBF	Infineon Technologies, N-Channel 150V 85A (Tc) 350W (Tc) Surface Mount D2PAK, HEXFET®	View
	MVGSF1N03LT1G	ON Semiconductor, N-Channel 30V 1.6A (Ta) 420mW (Ta) Surface Mount SOT-23,	View
	STB13N80K5	STMicroelectronics, N-Channel 800V 12A (Tc) 190W (Tc) Surface Mount D2PAK, SuperMESH5™	View

IPD082N10N3GATMA1 - Tags

IPD082N10N3GATMA1 IPD082N10N3GATMA1 PDF IPD082N10N3GATMA1 datasheet IPD082N10N3GATMA1 specification IPD082N10N3GATMA1 image IPD082N10N3GATMA1 India Renesas Electronics India IPD082N10N3GATMA1 buy IPD082N10N3GATMA1 IPD082N10N3GATMA1 price IPD082N10N3GATMA1 distributor IPD082N10N3GATMA1 supplier IPD082N10N3GATMA1 wholesales