Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD082N10N3GATMA1

IPD082N10N3GATMA1

IPD082N10N3GATMA1

Part NumberIPD082N10N3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 80A TO252-3

DatasheetIPx08xN10N3 G

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD082N10N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD082N10N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD082N10N3GATMA1.
We are offering IPD082N10N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD082N10N3GATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx08xN10N3 G
Standard Package	2500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD082N10N3GATMA1 - Related Products

	STP10NK70ZFP	STMicroelectronics, N-Channel 700V 8.6A (Tc) 35W (Tc) Through Hole TO-220FP, SuperMESH™	View
	DN2450K4-G	Microchip Technology, N-Channel 500V 350mA (Tj) 2.5W (Ta) Surface Mount TO-252, (D-Pak),	View
	IXFA3N120TRL	IXYS, N-Channel 1200V 3A (Tc) 200W (Tc) Surface Mount TO-263, HiPerFET™	View
	STO33N60M6	STMicroelectronics, N-Channel 600V 25A (Tc) 230W (Tc) Surface Mount TOLL (HV), MDmesh™ M6	View
	IPD036N04LGBTMA1	Infineon Technologies, N-Channel 40V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	ZVN3320FTA	Diodes Incorporated, N-Channel 200V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,	View
	CSD17577Q3AT	Texas Instruments, N-Channel 30V 35A (Ta) 2.8W (Ta), 53W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™	View
	IRFR7746TRPBF	Infineon Technologies, N-Channel 75V 56A (Tc) 99W (Tc) Surface Mount D-PAK (TO-252AA),	View
	SSM3K341TU,LF	Toshiba Semiconductor and Storage, N-Channel 60V 6A (Ta) 1.8W (Ta) Surface Mount UFM, U-MOSVIII-H	View
	SI7434DP-T1-GE3	Vishay Siliconix, N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI4190ADY-T1-GE3	Vishay Siliconix, N-Channel 100V 18.4A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	NTMFS5C673NLT1G	ON Semiconductor, N-Channel 60V 3.6W (Ta), 46W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View

IPD082N10N3GATMA1 - Tags

IPD082N10N3GATMA1 IPD082N10N3GATMA1 PDF IPD082N10N3GATMA1 datasheet IPD082N10N3GATMA1 specification IPD082N10N3GATMA1 image IPD082N10N3GATMA1 India Renesas Electronics India IPD082N10N3GATMA1 buy IPD082N10N3GATMA1 IPD082N10N3GATMA1 price IPD082N10N3GATMA1 distributor IPD082N10N3GATMA1 supplier IPD082N10N3GATMA1 wholesales