IPD50N03S2L06ATMA1
IPD50N03S2L06ATMA1
Part Number IPD50N03S2L06ATMA1
Description MOSFET N-CH 30V 50A TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
To learn about the specification of IPD50N03S2L06ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD50N03S2L06ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD50N03S2L06ATMA1.
We are offering IPD50N03S2L06ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD50N03S2L06ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD50N03S2L-06
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N03S2L06ATMA1 - Related ProductsMore >>
SIHP33N60EF-GE3
Vishay Siliconix, N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-220AB,
View
IPLU300N04S4R8XTMA1
Infineon Technologies, N-Channel 40V 300A (Tc) 429W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™
View
RJK005N03T146
Rohm Semiconductor, N-Channel 30V 500mA (Ta) 200mW (Ta) Surface Mount SMT3,
View
QS5U36TR
Rohm Semiconductor, N-Channel 20V 2.5A (Ta) 1.25W (Ta) Surface Mount TSMT5,
View
SIRA04DP-T1-GE3
Vishay Siliconix, N-Channel 30V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SIE882DF-T1-GE3
Vishay Siliconix, N-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L), TrenchFET®
View
FCD5N60TM
ON Semiconductor, N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount D-Pak, SuperFET™
View
FDD86540
ON Semiconductor, N-Channel 60V 21.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
View
IPB080N03LGATMA1
Infineon Technologies, N-Channel 30V 50A (Tc) 47W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
STF33N65M2
STMicroelectronics, N-Channel 650V 24A (Tc) 34W (Tc) Through Hole TO-220FP, MDmesh™ M2
View
SI7192DP-T1-GE3
Vishay Siliconix, N-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
DMN2011UTS-13
Diodes Incorporated, N-Channel 20V 21A (Tc) 1.3W (Ta) Surface Mount 8-TSSOP,
View
IPD50N03S2L06ATMA1 - Tags