IPD50N10S3L16ATMA1
IPD50N10S3L16ATMA1
Part Number IPD50N10S3L16ATMA1 Description MOSFET N-CH 100V 50A TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 50A (Tc) 100W (Tc) Surface Mount PG-TO252-3
To learn about the specification of IPD50N10S3L16ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD50N10S3L16ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD50N10S3L16ATMA1.
We are offering IPD50N10S3L16ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD50N10S3L16ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD50N10S3L-16 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.4V @ 60µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4180pF @ 25V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N10S3L16ATMA1 - Related ProductsMore >>
HTNFET-T Honeywell Aerospace, N-Channel 55V 50W (Tj) Through Hole 4-Power Tab, HTMOS™
View
AO7400 Alpha & Omega Semiconductor Inc., N-Channel 30V 1.7A (Ta) 350mW (Ta) Surface Mount SC-70-3,
View
R6030KNXC7 Rohm Semiconductor, N-Channel 600V 30A (Tc) 86W (Tc) Through Hole TO-220FM,
View
FDMS86581-F085 ON Semiconductor, N-Channel 60V 30A (Tc) 50W (Tj) Surface Mount 8-PQFN (5x6),
View
FDMS8050 ON Semiconductor, N-Channel 30V 55A (Tc) 156W (Tc) Surface Mount 8-PQFN (5x6),
View
PMV20XNER Nexperia USA Inc., N-Channel 30V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Surface Mount TO-236AB,
View
AON3414 Alpha & Omega Semiconductor Inc., N-Channel 30V 10.5A (Ta) 3.1W (Ta) Surface Mount 8-DFN (2.9x2.3),
View
FDP036N10A ON Semiconductor, N-Channel 100V 120A (Tc) 333W (Tc) Through Hole TO-220-3, PowerTrench®
View
IRF3710PBF Infineon Technologies, N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
View
FDD6530A ON Semiconductor, N-Channel 20V 21A (Ta) 3.3W (Ta), 33W (Tc) Surface Mount TO-252, PowerTrench®
View
TK90S06N1L,LQ Toshiba Semiconductor and Storage, N-Channel 60V 90A (Ta) 157W (Tc) Surface Mount TO-252-3, U-MOSVIII-H
View
SQS840EN-T1_GE3 Vishay Siliconix, N-Channel 40V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®
View
IPD50N10S3L16ATMA1 - Tags
English
