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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD60N10S4L-12
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3170pF @ 25V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Vishay Siliconix, N-Channel 60V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,
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FDMS86101DC
ON Semiconductor, N-Channel 100V 14.5A (Ta), 60A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount Dual Cool™56, Dual Cool™, PowerTrench®
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IRFB4019PBF
Infineon Technologies, N-Channel 150V 17A (Tc) 80W (Tc) Through Hole TO-220AB,
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STWA40N95K5
STMicroelectronics, N-Channel 950V 38A (Tc) 450W (Tc) Through Hole TO-247-3, MDmesh™
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IPD60R1K4C6ATMA1
Infineon Technologies, N-Channel 600V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6
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FDC655BN
ON Semiconductor, N-Channel 30V 6.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
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Infineon Technologies, N-Channel 800V 4A (Tc) 63W (Tc) Through Hole PG-TO220-3, CoolMOS™
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STMicroelectronics, N-Channel 100V 4A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2), DeepGATE™, STripFET™ VII
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BUK7M19-60EX
Nexperia USA Inc., N-Channel 60V 35.8A (Tc) 55W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™
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