IPD60N10S4L12ATMA1
IPD60N10S4L12ATMA1
Part Number IPD60N10S4L12ATMA1 Description MOSFET N-CH TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313
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IPD60N10S4L12ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD60N10S4L-12 Standard Package 1 Manufacturer Infineon Technologies Series Automotive, AEC-Q101, HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 60A, 10V Vgs(th) (Max) @ Id 2.1V @ 46µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3170pF @ 25V FET Feature - Power Dissipation (Max) 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-313 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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