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IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1

Part NumberIPD60R1K4C6ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 600V 3.2A TO252-3

DatasheetIPD60R1K4C6

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3

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IPD60R1K4C6ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD60R1K4C6
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ C6
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	9.4nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 100V
FET Feature	-
Power Dissipation (Max)	28.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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