IPD60R380C6ATMA1
IPD60R380C6ATMA1
Part Number IPD60R380C6ATMA1
Description MOSFET N-CH 600V 10.6A TO252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3
To learn about the specification of IPD60R380C6ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD60R380C6ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD60R380C6ATMA1.
We are offering IPD60R380C6ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD60R380C6ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx60R380C6
Standard Package 2500
Manufacturer Infineon Technologies
Series CoolMOS™ C6
Packaging Tape & Reel (TR)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R380C6ATMA1 - Related ProductsMore >>
HUF75345G3
ON Semiconductor, N-Channel 55V 75A (Tc) 325W (Tc) Through Hole TO-247-3, UltraFET™
View
STP85NF55L
STMicroelectronics, N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II
View
CMLDM7120G TR
Central Semiconductor Corp, N-Channel 20V 1A (Ta) 150mW (Ta) Surface Mount SOT-563,
View
APT18M100B
Microsemi Corporation, N-Channel 1000V 18A (Tc) 625W (Tc) Through Hole TO-247 [B],
View
SUP50010E-GE3
Vishay Siliconix, N-Channel 60V 150A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®
View
IRFB7434PBF
Infineon Technologies, N-Channel 40V 195A (Tc) 294W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
View
DMN3730U-7
Diodes Incorporated, N-Channel 30V 750mA (Ta) 450mW (Ta) Surface Mount SOT-23,
View
HAT2168H-EL-E
Renesas Electronics America, N-Channel 30V 30A (Ta) 15W (Tc) Surface Mount LFPAK,
View
IRLZ44ZSTRLPBF
Infineon Technologies, N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PAK, HEXFET®
View
AUIRF7669L2TR
Infineon Technologies, N-Channel 100V 19A (Ta), 114A (Tc) 3.3W (Ta), 100W (Tc) Surface Mount DIRECTFET L8, HEXFET®
View
DMT10H015LSS-13
Diodes Incorporated, N-Channel 100V 8.3A (Ta) 1.2W (Ta) Surface Mount 8-SO,
View
FCP600N60Z
ON Semiconductor, N-Channel 600V 7.4A (Tc) 89W (Tc) Through Hole TO-220-3, SuperFET® II
View
IPD60R380C6ATMA1 - Tags