Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD60R600P7SAUMA1

IPD60R600P7SAUMA1

IPD60R600P7SAUMA1

Part NumberIPD60R600P7SAUMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 600V 6A TO252-3

DatasheetIPD60R600P7S

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 6A (Tc) 30W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD60R600P7SAUMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD60R600P7SAUMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD60R600P7SAUMA1.
We are offering IPD60R600P7SAUMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD60R600P7SAUMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD60R600P7S
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id	4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	363pF @ 400V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD60R600P7SAUMA1 - Related Products

	SSM3H137TU,LF	Toshiba Semiconductor and Storage, N-Channel 34V 2A (Ta) 800mW (Ta) Surface Mount UFM, U-MOSIV	View
	STU6NF10	STMicroelectronics, N-Channel 100V 6A (Tc) 30W (Tc) Through Hole I-PAK, STripFET™	View
	TPH3300CNH,L1Q	Toshiba Semiconductor and Storage, N-Channel 150V 18A (Ta) 1.6W (Ta), 57W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	BSP125H6327XTSA1	Infineon Technologies, N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	STW6N90K5	STMicroelectronics, N-Channel 900V 6A (Tc) 110W (Tc) Through Hole TO-247, MDmesh™ K5	View
	STD5N60M2	STMicroelectronics, N-Channel 600V 3.5A (Tc) 45W (Tc) Surface Mount DPAK, MDmesh™ II Plus	View
	PMV90ENER	Nexperia USA Inc., N-Channel 30V 3A (Ta) 460mW (Ta) Surface Mount TO-236AB,	View
	STB75NF20	STMicroelectronics, N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2PAK, STripFET™	View
	SISS02DN-T1-GE3	Vishay Siliconix, N-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View
	DMN10H220LE-13	Diodes Incorporated, N-Channel 100V 2.3A (Ta) 1.8W (Ta) Surface Mount SOT-223,	View
	IRF630PBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	TK7P65W,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 6.8A (Ta) 60W (Tc) Surface Mount DPAK, DTMOSIV	View

IPD60R600P7SAUMA1 - Tags

IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 PDF IPD60R600P7SAUMA1 datasheet IPD60R600P7SAUMA1 specification IPD60R600P7SAUMA1 image IPD60R600P7SAUMA1 India Renesas Electronics India IPD60R600P7SAUMA1 buy IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 price IPD60R600P7SAUMA1 distributor IPD60R600P7SAUMA1 supplier IPD60R600P7SAUMA1 wholesales