IPD65R190C7ATMA1

Part NumberIPD65R190C7ATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD65R190C7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ C7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1150pF @ 400V
FET Feature	-
Power Dissipation (Max)	72W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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