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IPD65R250E6XTMA1

IPD65R250E6XTMA1

Part NumberIPD65R250E6XTMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH TO252-3

DatasheetIPD65R250E6

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 16.1A (Tc) 208W (Tc) Surface Mount PG-TO252-3

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IPD65R250E6XTMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD65R250E6
Standard Package	2500
Manufacturer	Infineon Technologies
Series	CoolMOS™ E6
Packaging	Tape & Reel (TR)
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	250mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 1000V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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IPD65R250E6XTMA1 - Tags

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