IPD65R400CEAUMA1
IPD65R400CEAUMA1
Part Number IPD65R400CEAUMA1
Description MOSFET N-CH 650V TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description N-Channel 650V 15.1A (Tc) 118W (Tc) Surface Mount PG-TO252-3
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IPD65R400CEAUMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD65R400CE, IPS65R400CE
Standard Package 1
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 15.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
FET Feature Super Junction
Power Dissipation (Max) 118W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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