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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD75N04S4-06
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 25V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SUD23N06-31-GE3
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SI7108DN-T1-GE3
Vishay Siliconix, N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
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IPP093N06N3GXKSA1
Infineon Technologies, N-Channel 60V 50A (Tc) 71W (Tc) Through Hole PG-TO220-3, OptiMOS™
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