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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD75N04S4-06 Standard Package 1 Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 26µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 25V FET Feature - Power Dissipation (Max) 58W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-313 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SI7456DDP-T1-GE3 Vishay Siliconix, N-Channel 100V 27.8A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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SQJA82EP-T1_GE3 Vishay Siliconix, N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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BSS123NH6433XTMA1 Infineon Technologies, N-Channel 100V 190mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
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RDR005N25TL Rohm Semiconductor, N-Channel 250V 500mA (Ta) 540mW (Ta) Surface Mount TSMT3,
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BS870Q-7-F Diodes Incorporated, N-Channel 60V 250mA (Ta) 300mW Surface Mount SOT-23, Automotive, AEC-Q101
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SI7192DP-T1-GE3 Vishay Siliconix, N-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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FQD4N25TM-WS ON Semiconductor, N-Channel 250V 3A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount D-Pak, QFET®
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IXFK150N30P3 IXYS, N-Channel 300V 150A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™, Polar3™
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DMN2058UW-7 Diodes Incorporated, N-Channel 20V 3.5A (Ta) 500mW (Ta) Surface Mount SOT-323,
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IRF1010ESTRLPBF Infineon Technologies, N-Channel 60V 84A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®
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FCP067N65S3 ON Semiconductor, N-Channel 650V 44A (Tc) 312W (Tc) Through Hole TO-220, SuperFET® III
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