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IPD80R1K4P7ATMA1

IPD80R1K4P7ATMA1

Part NumberIPD80R1K4P7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 4A DPAK

DatasheetIPD80R1K4P7

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 4A (Tc) 32W (Tc) Surface Mount TO-252

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IPD80R1K4P7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD80R1K4P7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 500V
FET Feature	Super Junction
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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IPD80R1K4P7ATMA1 - Tags

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