IPD80R2K0P7ATMA1
IPD80R2K0P7ATMA1
Part Number IPD80R2K0P7ATMA1 Description MOSFET N-CH 800V 3A TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 3A (Tc) 24W (Tc) Surface Mount PG-TO252-3
To learn about the specification of IPD80R2K0P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R2K0P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R2K0P7ATMA1.
We are offering IPD80R2K0P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD80R2K0P7ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD80R2K0P7 Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ P7 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 940mA, 10V Vgs(th) (Max) @ Id 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 175pF @ 500V FET Feature - Power Dissipation (Max) 24W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD80R2K0P7ATMA1 - Related ProductsMore >>
TK5Q60W,S1VQ Toshiba Semiconductor and Storage, N-Channel 600V 5.4A (Ta) 60W (Tc) Through Hole I-PAK, DTMOSIV
View
SIHB24N65E-GE3 Vishay Siliconix, N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount D2PAK,
View
RTQ035N03TR Rohm Semiconductor, N-Channel 30V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),
View
RFD12N06RLESM9A ON Semiconductor, N-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-252AA, UltraFET™
View
BUK9611-80E,118 Nexperia USA Inc., N-Channel 80V 75A (Tc) 182W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
View
FDD850N10L ON Semiconductor, N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount DPAK, PowerTrench®
View
STD17NF03LT4 STMicroelectronics, N-Channel 30V 17A (Tc) 30W (Tc) Surface Mount DPAK, STripFET™ II
View
NVD6416ANLT4G-VF01 ON Semiconductor, N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK-3,
View
IRFIB5N65APBF Vishay Siliconix, N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3,
View
SUM70030E-GE3 Vishay Siliconix, N-Channel 100V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), TrenchFET®
View
STL30N10F7 STMicroelectronics, N-Channel 100V 30A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VII
View
IPB60R360P7ATMA1 Infineon Technologies, N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7
View
IPD80R2K0P7ATMA1 - Tags
English
