IPD80R2K0P7ATMA1

Part NumberIPD80R2K0P7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V 3A TO252-3

DatasheetIPD80R2K0P7

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 3A (Tc) 24W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD80R2K0P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD80R2K0P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD80R2K0P7ATMA1.
We are offering IPD80R2K0P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD80R2K0P7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD80R2K0P7
Standard Package	2500
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	175pF @ 500V
FET Feature	-
Power Dissipation (Max)	24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R2K0P7ATMA1 - Related Products

More >>

BSZ018NE2LSIATMA1	Infineon Technologies, N-Channel 25V 22A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
DMTH8012LK3Q-13	Diodes Incorporated, N-Channel 80V 50A (Tc) 2.6W (Ta) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101	View
TSM60NB190CI C0G	Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 33.8W (Tc) Through Hole ITO-220AB,	View
NTMFS08N003C	ON Semiconductor, N-Channel 80V 22A (Ta), 147A (Tc) 2.7W (Ta), 125W (Tc) Surface Mount Power56, PowerTrench®	View
IRFH5301TRPBF	Infineon Technologies, N-Channel 30V 35A (Ta), 100A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®	View
SI7862ADP-T1-E3	Vishay Siliconix, N-Channel 16V 18A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
SUD50N04-8M8P-4GE3	Vishay Siliconix, N-Channel 40V 14A (Ta), 50A (Tc) 3.1W (Ta), 48.1W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
TSM025NB04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 24A (Ta), 161A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5x6),	View
SQJQ100E-T1_GE3	Vishay Siliconix, N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8, Automotive, AEC-Q101, TrenchFET®	View
SIR470DP-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
APT36N90BC3G	Microsemi Corporation, N-Channel 900V 36A (Tc) 390W (Tc) Through Hole TO-247 [B], CoolMOS™	View
SQ2318AES-T1_GE3	Vishay Siliconix, N-Channel 40V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View

IPD80R2K0P7ATMA1 - Tags

IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 PDF IPD80R2K0P7ATMA1 datasheet IPD80R2K0P7ATMA1 specification IPD80R2K0P7ATMA1 image IPD80R2K0P7ATMA1 India Renesas Electronics India IPD80R2K0P7ATMA1 buy IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 price IPD80R2K0P7ATMA1 distributor IPD80R2K0P7ATMA1 supplier IPD80R2K0P7ATMA1 wholesales