IPD90R1K2C3ATMA1
IPD90R1K2C3ATMA1
Part Number IPD90R1K2C3ATMA1
Description MOSFET N-CH 900V 5.1A TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description N-Channel 900V 5.1A (Tc) 83W (Tc) Surface Mount PG-TO252-3
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IPD90R1K2C3ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD90R1K2C3
Standard Package 1
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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