IPG20N10S4L35ATMA1

Part NumberIPG20N10S4L35ATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	IPG20N10S4L-35
Standard Package	1
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	20A
Rds On (Max) @ Id, Vgs	35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs	17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1105pF @ 25V
Power - Max	43W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-4

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