IPG20N10S4L35ATMA1
IPG20N10S4L35ATMA1
Part Number IPG20N10S4L35ATMA1
Description MOSFET 2N-CH 8TDSON
Package / Case 8-PowerVDFN
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Lead Time To be Confirmed
Detailed Description Mosfet Array 2 N-Channel (Dual) 100V 20A 43W Surface Mount PG-TDSON-8-4
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IPG20N10S4L35ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet IPG20N10S4L-35
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V
Power - Max 43W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4
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