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IPL60R085P7AUMA1

IPL60R085P7AUMA1

Part NumberIPL60R085P7AUMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 4VSON

DatasheetIPL60R085P7

Package / Case4-PowerTSFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 39A (Tc) 154W (Tc) Surface Mount PG-VSON-4

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IPL60R085P7AUMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPL60R085P7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	85mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id	4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2180pF @ 400V
FET Feature	-
Power Dissipation (Max)	154W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-VSON-4
Package / Case	4-PowerTSFN

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IPL60R085P7AUMA1 - Tags

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