IPN80R600P7ATMA1
IPN80R600P7ATMA1
Part Number IPN80R600P7ATMA1
Description COOLMOS P7 800V SOT-223
Package / Case TO-261-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 8A (Tc) 7.4W (Tc) Surface Mount PG-SOT223
To learn about the specification of IPN80R600P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPN80R600P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPN80R600P7ATMA1.
We are offering IPN80R600P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPN80R600P7ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPN80R600P7
Standard Package 1
Manufacturer Infineon Technologies
Series CoolMOS™ P7
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 500V
FET Feature -
Power Dissipation (Max) 7.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-3
IPN80R600P7ATMA1 - Related ProductsMore >>
STW12N170K5
STMicroelectronics, N-Channel 1700V 5A (Tc) 250W (Tc) Through Hole TO-247, MDmesh™ K5
View
TPH8R903NL,LQ
Toshiba Semiconductor and Storage, N-Channel 30V 20A (Tc) 1.6W (Ta), 24W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
View
SIRA54DP-T1-GE3
Vishay Siliconix, N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
FDB12N50TM
ON Semiconductor, N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK, UniFET™
View
APT31M100L
Microsemi Corporation, N-Channel 1000V 32A (Tc) 1040W (Tc) Through Hole TO-264, POWER MOS 8™
View
RUM001L02T2CL
Rohm Semiconductor, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount VMT3,
View
STP40NF10L
STMicroelectronics, N-Channel 100V 40A (Tc) 150W (Tc) Through Hole TO-220AB, STripFET™
View
SI2318DS-T1-E3
Vishay Siliconix, N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
SIRA54DP-T1-GE3
Vishay Siliconix, N-Channel 40V 60A (Tc) 36.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
PSMN0R9-30YLDX
Nexperia USA Inc., N-Channel 30V 300A 291W Surface Mount LFPAK56, Power-SO8,
View
IPN70R600P7SATMA1
Infineon Technologies, N-Channel 700V 8.5A (Tc) 6.9W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
STH180N10F3-2
STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, STripFET™ III
View
IPN80R600P7ATMA1 - Tags