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IPN80R900P7ATMA1


IPN80R900P7ATMA1

Part NumberIPN80R900P7ATMA1

Manufacturer

Description

Datasheet

Package / CaseTO-261-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPN80R900P7ATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 500V
FET Feature-
Power Dissipation (Max)7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseTO-261-3

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