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IPP052N06L3GXKSA1

IPP052N06L3GXKSA1

Part NumberIPP052N06L3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 80A TO220-3

DatasheetIPx049, 51N06L3G

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 80A (Tc) 115W (Tc) Through Hole PG-TO220-3

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IPP052N06L3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx049, 51N06L3G
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8400pF @ 30V
FET Feature	-
Power Dissipation (Max)	115W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

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IPP052N06L3GXKSA1 - Tags

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