Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPP057N06N3GXKSA1

IPP057N06N3GXKSA1

IPP057N06N3GXKSA1

Part NumberIPP057N06N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 80A TO220-3

DatasheetIPx054,57N06N3 G

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 80A (Tc) 115W (Tc) Through Hole PG-TO220-3

To learn about the specification of IPP057N06N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPP057N06N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPP057N06N3GXKSA1.
We are offering IPP057N06N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPP057N06N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx054,57N06N3 G
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs	82nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6600pF @ 30V
FET Feature	-
Power Dissipation (Max)	115W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

IPP057N06N3GXKSA1 - Related Products

	SISS28DN-T1-GE3	Vishay Siliconix, N-Channel 25V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View
	SIHA20N50E-E3	Vishay Siliconix, N-Channel 500V 19A (Tc) 34W (Tc) Through Hole TO-220 Full Pack,	View
	SI4160DY-T1-GE3	Vishay Siliconix, N-Channel 30V 25.4A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI4464DY-T1-GE3	Vishay Siliconix, N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	STW15NK90Z	STMicroelectronics, N-Channel 900V 15A (Tc) 350W (Tc) Through Hole TO-247-3, SuperMESH™	View
	TK20N60W5,S1VF	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 165W (Tc) Through Hole TO-247, DTMOSIV	View
	CSD18537NKCS	Texas Instruments, N-Channel 60V 50A (Tc) 94W (Tc) Through Hole TO-220-3, NexFET™	View
	IRF200S234	Infineon Technologies, N-Channel 200V 90A 417W (Tc) Surface Mount D2PAK,	View
	STP7NK40Z	STMicroelectronics, N-Channel 400V 5.4A (Tc) 70W (Tc) Through Hole TO-220AB, SuperMESH™	View
	NTMFS4833NT3G	ON Semiconductor, N-Channel 30V 16A (Ta), 156A (Tc) 910mW (Ta), 125W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	SIS406DN-T1-GE3	Vishay Siliconix, N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IPP65R110CFDAAKSA1	Infineon Technologies, N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3, Automotive, AEC-Q101, CoolMOS™	View

IPP057N06N3GXKSA1 - Tags

IPP057N06N3GXKSA1 IPP057N06N3GXKSA1 PDF IPP057N06N3GXKSA1 datasheet IPP057N06N3GXKSA1 specification IPP057N06N3GXKSA1 image IPP057N06N3GXKSA1 India Renesas Electronics India IPP057N06N3GXKSA1 buy IPP057N06N3GXKSA1 IPP057N06N3GXKSA1 price IPP057N06N3GXKSA1 distributor IPP057N06N3GXKSA1 supplier IPP057N06N3GXKSA1 wholesales