Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPP086N10N3GXKSA1

IPP086N10N3GXKSA1

IPP086N10N3GXKSA1

Part NumberIPP086N10N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 80A TO220-3

DatasheetIPx08xN10N3 G

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3

To learn about the specification of IPP086N10N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPP086N10N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPP086N10N3GXKSA1.
We are offering IPP086N10N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPP086N10N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx08xN10N3 G
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

IPP086N10N3GXKSA1 - Related Products

	IXFN36N60	IXYS, N-Channel 600V 36A (Tc) 520W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	TSM60N750CH C5G	Taiwan Semiconductor Corporation, N-Channel 600V 6A (Tc) 62.5W (Tc) Through Hole TO-251 (IPAK),	View
	IRL540NPBF	Infineon Technologies, N-Channel 100V 36A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	STL16N65M2	STMicroelectronics, N-Channel 650V 7.5A (Tc) 56W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M2	View
	IRF740ASTRLPBF	Vishay Siliconix, N-Channel 400V 10A (Tc) 125W (Tc) Surface Mount,	View
	TN2640K4-G	Microchip Technology, N-Channel 400V 500mA (Tj) 2.5W (Ta) Surface Mount TO-252, (D-Pak),	View
	STH145N8F7-2AG	STMicroelectronics, N-Channel 80V 90A (Tc) 200W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F7	View
	CMPDM7002AHC TR	Central Semiconductor Corp, N-Channel 60V 1A (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	FDC8601	ON Semiconductor, N-Channel 100V 2.7A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	IPD60R600C6ATMA1	Infineon Technologies, N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6	View
	DMN2005K-7	Diodes Incorporated, N-Channel 20V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,	View
	SQD40030E_GE3	Vishay Siliconix, N-Channel 40V Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View

IPP086N10N3GXKSA1 - Tags

IPP086N10N3GXKSA1 IPP086N10N3GXKSA1 PDF IPP086N10N3GXKSA1 datasheet IPP086N10N3GXKSA1 specification IPP086N10N3GXKSA1 image IPP086N10N3GXKSA1 India Renesas Electronics India IPP086N10N3GXKSA1 buy IPP086N10N3GXKSA1 IPP086N10N3GXKSA1 price IPP086N10N3GXKSA1 distributor IPP086N10N3GXKSA1 supplier IPP086N10N3GXKSA1 wholesales