Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPP114N12N3GXKSA1

IPP114N12N3GXKSA1

IPP114N12N3GXKSA1

Part NumberIPP114N12N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 120V 75A TO220-3

DatasheetIPP114N12N3 G

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-TO220-3

To learn about the specification of IPP114N12N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPP114N12N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPP114N12N3GXKSA1.
We are offering IPP114N12N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPP114N12N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPP114N12N3 G
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11.4mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4310pF @ 60V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

IPP114N12N3GXKSA1 - Related Products

	SIJ438ADP-T1-GE3	Vishay Siliconix, N-Channel 40V 45.3A (Ta), 169A(Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	STP33N65M2	STMicroelectronics, N-Channel 650V 24A (Tc) 190W (Tc) Through Hole TO-220, MDmesh™ M2	View
	BS170	ON Semiconductor, N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3,	View
	FDMC86240	ON Semiconductor, N-Channel 150V 4.6A (Ta), 16A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	TN2510N8-G	Microchip Technology, N-Channel 100V 730mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	RQ3E100BNTB	Rohm Semiconductor, N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),	View
	VN2222LL-G-P003	Microchip Technology, N-Channel 60V 230mA (Tj) 400mW (Ta), 1W (Tc) Through Hole TO-92-3,	View
	DMT6005LPS-13	Diodes Incorporated, N-Channel 60V 17.9A (Ta), 100A (Tc) 2.6W (Ta), 125W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101	View
	PSMN3R9-25MLC,115	Nexperia USA Inc., N-Channel 25V 70A (Tc) 69W (Tc) Surface Mount LFPAK33,	View
	CSD19538Q2T	Texas Instruments, N-Channel 100V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2), NexFET™	View
	FQD2N100TM	ON Semiconductor, N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®	View
	IRFML8244TRPBF	Infineon Technologies, N-Channel 25V 5.8A (Ta) 1.25W (Ta) Surface Mount SOT-23, HEXFET®	View

IPP114N12N3GXKSA1 - Tags

IPP114N12N3GXKSA1 IPP114N12N3GXKSA1 PDF IPP114N12N3GXKSA1 datasheet IPP114N12N3GXKSA1 specification IPP114N12N3GXKSA1 image IPP114N12N3GXKSA1 India Renesas Electronics India IPP114N12N3GXKSA1 buy IPP114N12N3GXKSA1 IPP114N12N3GXKSA1 price IPP114N12N3GXKSA1 distributor IPP114N12N3GXKSA1 supplier IPP114N12N3GXKSA1 wholesales