IPP200N25N3GXKSA1
IPP200N25N3GXKSA1
Part Number IPP200N25N3GXKSA1
Description MOSFET N-CH 250V 64A TO220-3
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description N-Channel 250V 64A (Tc) 300W (Tc) Through Hole PG-TO220-3
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IPP200N25N3GXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx200N25N3 G
Standard Package 500
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 64A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
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